Titlebook: Ion Implantation in Semiconductors; Proceedings of the I Ingolf Ruge (Professor an der Technischen Universi Conference proceedings 1971 Spr

语源学

Localized Mode of Substitutional Carbon in Ion-Implanted Silicontor. A C./C fraction of 0.2 was observed for a uniform dopant profile obtained by a multiple energy implant at room temperature (4.7, 7.7, and 10.10. C./cm. at 60, 140, and 260 keV, respectively). C./C increased to ~0.75 upon annealing to 500°C. Absence of an observable C. after 7 · 10. 200 keV C./c

Ordeal

commune

Fulminate

Ischemia

松鸡

Photoconductivity of Boron Implanted Siliconssociated with the divacancy a photoconductivity level at ~0.4 eV is detected in the spectrum. This level has been associated with boron interstitial atoms in sites of trigonal symmetry in boron doped silicon irradiated with electrons. Annealing experiments are performed up to 330 °C..Results are co

紧张过度

Electron Paramagnetic Resonance on Divacancies in Phosphorus-Implanted Siliconcon. Doses of 2 • 10.–10. P/cm. are found to produce small numbers (~ 10./cm.) of the Si-G7 spectrum, which arises from the single negative charge state of the divacancy. The observed introduction rate is an order of magnitude lower than the production as observed by infraredabsorption. This indicat

SPALL

Distribution of Boron Implanted Siliconandard deviations (30–300 keV) are in good agreement with calculated values when a value of electronic stopping 1.58 greater than that given by standard LSS theory is used, as was independently measured by Eisen. The channeled <111> distributions show maxima 1.9–1.5 times deeper than the random rang

incubus

PRE