Titlebook: Ion Implantation in Semiconductors; Proceedings of the I Ingolf Ruge (Professor an der Technischen Universi Conference proceedings 1971 Spr

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A New Method for Boron Doping of Silicon by Implantation of BF2-Moleculeserature BF. implantation the annealing data indicate that an amorphous layer was formed; the sheet resistivity after 650°C anneal is a factor of 10 lower than for an equivalent energy boron implant and the samples are nearly completely annealed. For doses of ⩽10. cm. there is no marked difference in

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978-3-642-80662-9Springer-Verlag, Berlin · Heidelberg 1971

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Crystal Defects and Electrical Properties in Ion-Implanted SiliconInvestigations have been made on crystal damages in silicon produced by 100 and 150 keV B., P., and Ne. ion implantations. Their effects on electrical properties of the implanted layers have also been studied as a function of implantation and subsequent annealing conditions