Titlebook: Ion Implantation in Semiconductors; Proceedings of the I Ingolf Ruge (Professor an der Technischen Universi Conference proceedings 1971 Spr

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Distribution of Boron Implanted Silicones for 80–300 keV range. Distributions at various angles away from the <111> or <100> channels are presented and comparisons are made between distributions implanted with [110] planar channeling and those which have no major index planar channeling. A discussion of these results and related annealing behavior for boron implanted silicon is given.

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Investigation of Ion Implantation Damage with Stress Measurementstroduce damage sublinearly with . at medium . values. The maximum in all the stress versus . results is taken as evidence for an elastic-plastic transition in the implanted layer. This elastic-plastic transition is correlated with what others have called the crystalline-to-amorphous transition.

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