Titlebook: Ion Implantation in Semiconductors; Proceedings of the I Ingolf Ruge (Professor an der Technischen Universi Conference proceedings 1971 Spr

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Crystal Defects and Electrical Properties in Ion-Implanted SiliconInvestigations have been made on crystal damages in silicon produced by 100 and 150 keV B., P., and Ne. ion implantations. Their effects on electrical properties of the implanted layers have also been studied as a function of implantation and subsequent annealing conditions

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Conference proceedings 1971e impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds

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It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of

Lineage

Energy Levels of Defects in Ion Implanted Silicon5 eV to close to midgap. Defect annealing occurs in several different stages while some of the defects initially exhibit a pronounced increase in concentration on heat treatment above room temperature.

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Photoconductivity of Boron Implanted Siliconatoms in sites of trigonal symmetry in boron doped silicon irradiated with electrons. Annealing experiments are performed up to 330 °C..Results are complicated by the poor electrical isolation between the implanted layer and the substrate; therefore the substrate gives a certain contribution to the photoconductivity.

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Enhanced Annealing Effects of Boron Implanted Layers in Silicon by Post-Implantation of Silicon Ionsr extending up to the surface. The boron in this amorphous layer becomes 100% active after annealing at 600 °C. When the boron dose is ⩾ 3 · 10./cm., shallow silicon implantations produce stronger enhanced annealing effects than predicted on the basis of the of the damage produced by Si ions alone.

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Localized Mode of Substitutional Carbon in Ion-Implanted Siliconm. at room temperature is ascribed to the high degree of disorder in the implanted layer. C. was observed in this high fluence implanted sample after annealing to 500 °C. An additional low fluence implantation of an annealed C-implanted layer decreased C., consistent with a Si replacement mechanism.