Overview: Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technology.Discusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, t.The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since disl
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