| 书目名称 | Extended Defects in Germanium | | 副标题 | Fundamental and Tech | | 编辑 | Cor Claeys,Eddy Simoen | | 视频video | | | 概述 | Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technology.Discusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, t | | 丛书名称 | Springer Series in Materials Science | | 图书封面 |  | | 描述 | .The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation durin | | 出版日期 | Book 2009 | | 关键词 | Extended defects; Germanium; Processing; Semiconductor devices; crystal; crystallography; physics | | 版次 | 1 | | doi | https://doi.org/10.1007/978-3-540-85614-6 | | isbn_softcover | 978-3-642-09921-2 | | isbn_ebook | 978-3-540-85614-6Series ISSN 0933-033X Series E-ISSN 2196-2812 | | issn_series | 0933-033X | | copyright | Springer-Verlag Berlin Heidelberg 2009 |
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发表于 2025-3-21 20:08:31
