Titlebook: Extended Defects in Germanium; Fundamental and Tech Cor Claeys,Eddy Simoen Book 2009 Springer-Verlag Berlin Heidelberg 2009 Extended defect

Fillet,Filet

978-3-642-09921-2Springer-Verlag Berlin Heidelberg 2009

Isometric

OWL

Brittle

Sheung Ng,Kotaro Yoshida,Judith T. Zelikoffate acceptor states [1–5]. N-type Ge became p-type after deformation, while the resistivity of p-Ge did not exhibit important changes. Soon after, several hypotheses on the nature of the dislocation-related acceptor states were launched. It was Shockley who put forward the idea of the acceptor opera

大猩猩

Keith D. Salazar,Rosana Schaferular arrangement of misfit dislocations, which accommodate for the misorientation between two grains. Following Read and Shockley, this can be represented schematically as shown in Fig. 3.1 [1,2]. An important parameter is the misfit angle or the angle of inclination θ, which defines the distance be

Custodian

Introduction to Immunotoxicology,owadays routinely achieved on the 200 mm wafer diameter level [1] and its feasibility at 300 mm has been demonstrated. The main challenge for the state-of-the-art Ge wafers is the presence of a few grown-in void defects with micrometer size, believed to consist of large vacancy aggregates and conden

凶猛

https://doi.org/10.1385/1592591140 introduce metallic and other impurities in the near-surface layer, which diffuse deeper in the bulk during a subsequent heat treatment, thereby affecting the electrical (lifetime and resistivity) properties. Dry etching, on the other hand, results in the creation of radiation damage, as energetic i

Conspiracy

Cor Claeys,Eddy SimoenDeals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technology.Discusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, t

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沉默

https://doi.org/10.1007/978-3-540-85614-6Extended defects; Germanium; Processing; Semiconductor devices; crystal; crystallography; physics