Titlebook: Wafer-Level Chip-Scale Packaging; Analog and Power Sem Shichun Qu,Yong Liu Book 2015 Springer Science+Business Media New York 2015 Analog T

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Wafer-Level Discrete Power Mosfet Package Design,de various diodes, bipolars, metal–oxide semiconductor field-effect transistors (Mosfets), and insulated gate bipolar transistor (IGBTs). As the needs of miniaturization, one trend of the discrete power Mosfet packages is to move the discrete power devices into various wafer-level chip-scale package

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Wafer-Level Packaging TSV/Stack Die for Integration of Analog and Power Solution,few years ago are today commonplace thanks in part to advances in WLCSP electronic package design. From portable applications such as in mobile telecommunications to consumer electronics, each imposes its own individual demands on the development of WLCSP. To meet such a diverse range of application

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Thermal Management, Design, and Analysis for WLCSP,the device does not operate in a normal way. It is also well known that the failure rates of semiconductor devices increase exponentially as the junction temperature rises. Figure 7.1 shows a FLIR camera image of temperature distribution inside a smart phone, which gives the sources of heat dissipat

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Electrical and Multiple Physics Simulation for Analog and Power WLCSP, electrical performance of different devices, effect of assembly reflow process on electrical properties, and the resistance of a solder joint, have been done to improve a product’s electrical performance [1–3]. In recent years, the investigation for the electrical performance of a WLCSP has been pa

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