Titlebook: Ion Implantation: Equipment and Techniques; Proceedings of the F Heiner Ryssel,Hans Glawischnig Conference proceedings 1983 Springer-Verlag

heterodox

J. Wu,H. Ma,B. Ren. Davon sind die letzten beiden zweifellos die einfachsten Blöcke, über die es nicht viel zu sagen gibt. Auch die Operandenblöcke sind unproblematisch, solange man nur reine Register betrachtet. Es ist jedoch zweckmäßig, bestimmte häufig vorkommende Kombinationen eines Operandenblocks mit meist mehr

最高点

A New Research Implanter at the University of Surreyx 100mm. Beam diagnostics include calorimeters for current and power density determinations and facilities for IR wafer temperature and beam purity measurements during implantation. Samples are loaded through an air lock using a UHV compatible transporter which includes provisions for sample cooling or heating.

Congeal

蒸发

Emittance Measurements on an Indirectly Heated Heavy-Ion Source the wafers strictly depends on the shape of the ion beam as well. The shape of the beam, i.e. its radius and angle on the target, is a function of the same parameters at the source. This function can be characterised by the emittance of the beam.

evanescent

Comparison of Beam Scanning Systemsn an ion implanter for semiconductor processing. This paper reviews the features and limits of each beam scanning technique. X-Y beam scanning systems using magnetic and electrostatic deflection are described. The ability for electrostatic X-Y scanning of μ perv.*, is reviewed and results reported.

MAUVE

正论

CRAMP

A High-Brightness Duoplasmatron Ion Sourcecolumn. A very precisely self-aligning accel/decel extraction system is directly attached with its insulator to the anode flange..Several gases have been used in this source; the top result for argon at 15 keV beam energy was a 105 μA ion current with an emittance of 2.8 mm mrad and a normalized brightness of 16 A/(mm mrad)..

Aprope

金盘是高原