Titlebook: Ion Implantation: Equipment and Techniques; Proceedings of the F Heiner Ryssel,Hans Glawischnig Conference proceedings 1983 Springer-Verlag

intricacy

滔滔不绝地讲

Minatory

Ion Implantation: Equipment and Techniques978-3-642-69156-0Series ISSN 0172-5734

ANTI

Alpha-Cells

https://doi.org/10.1007/978-3-642-69156-0Apertur; Implantation; Ionenimplantation; Planar; Plantation; Plasmat; information; laser; metals; paper; poly

戏法

Physical Limitations of Ion Implantation EquipmentWhen the physical limitations of ion implantation systems are examined, several constraints related to the generation, analysis and scanning of energetic ion beams can be readily identified which will clearly limit the performance of this equipment. These constraints will probably be relevant to most applications of the ion implantation technique.

conjunctivitis

An Ion Source for Semiconductor ImplantationAn ion source is described which can produce ions of species possessing various chemical and physical properties. A limited review of the source characteristics is also given.

踉跄

Radio Frequency Ion Acceleratorseries of linear drift tubes. The r.f. power supply was self-oscillating which made the system very simple to run and in general its compact design makes it very economical to build for a range of non-relativistic ions.

现存

Performance of the Bethge-Baumann Ion Source with Radio Frequency Operationr transistors [1]. These rather shallow structures ( ≃ 1 .m) are required for high frequency operation. Direct implantation eliminates the need for epitaxial growth which is difficult to implement for such thin layers.

涂掉

Multipole Ion Source for Ion Implantation and Isotope Separation source has a single slit extractor. The multipole field was created by a combination of rare-earth cobalt magnets with iron yoke and pole structure. The magnetic structure is freon cooled and surrounds a graphite arc chamber. We tested 4, 6, and 10-pole configurations.