Titlebook: Ion Implantation: Equipment and Techniques; Proceedings of the F Heiner Ryssel,Hans Glawischnig Conference proceedings 1983 Springer-Verlag

profligate

High Throughput Wafer Handling System for Serial Process Ion Implantationsed one wafer at a time, by automatically moving wafers mounted on metal wafer holders in and out of the target position from specially designed cassettes. Further equipment developments which eliminated the need for mounting wafers on holders, allowed automatic handling and implantation of wafers directly from standard industrial cassettes.

骑师

A New Ion Implanter for Solar Cell Fabricationcell p-n junction formation. In this implanter, a single magnet carries out mass separation as well as ion-beam scanning, and wafers mechanically traverse the scanned-beam region only once, perpendicularly to the beamscanning direction. The implanter provides the maximum implant current of 20mA at 3

骇人

奴才

A New Research Implanter at the University of Surreyntott Separator magnet with adjustable pole pieces which match the beam to the ion optics of a cylindrical electrostatic lens/accelerator system. Electrostatic elements further transport the beam and incorporate two neutral particle traps and electrostatic beam scanning over a maximum area of 100mm

Aviary

Statins

Performance of the Bethge-Baumann Ion Source with Radio Frequency Operationr transistors [1]. These rather shallow structures ( ≃ 1 .m) are required for high frequency operation. Direct implantation eliminates the need for epitaxial growth which is difficult to implement for such thin layers.

Benign

Emittance Measurements on an Indirectly Heated Heavy-Ion Sourceracted ion current can be stabilised. But the stability of the beam is only one of the important parameters; the uniformity of the dose implanted into the wafers strictly depends on the shape of the ion beam as well. The shape of the beam, i.e. its radius and angle on the target, is a function of th

纤细

A High-Brightness Duoplasmatron Ion Sourcehoice as it offers high efficiency and easy operation with many gases. The usually applied technique of beam formation, however, cannot succeed in producing highly brilliant beams..In this study, the GSI Duoplasmatron for multiply charged heavy ions was modified according to the rules of high-curren

Mystic

Optimization of a Single-Aperture Extraction System for High-Current Ion Sourcescal restrictions. Insertion of a “puller” electrode into the extraction gap then permits the use of a larger aperture with correspondingly higher current, and without deteriorating beam quality. Additionally, in our system, the electron-screening electrode is enclosed between two ground electrodes,

不理会

Development of a High-Current Ion Source for Non-Volatile Elementsh. HORDIS was derived from the GSI high-current source for gases, ELSIRE, conserving its discharge geometry, magnetic multipole field, and exchangeable single or multiple aperture extraction system..In order to process metals or other non-volatile elements, HORDIS is equipped with an evaporator oven