Titlebook: Circuit Design for Reliability; Ricardo Reis,Yu Cao,Gilson Wirth Book 2015 Springer Science+Business Media New York 2015 Embedded Systems.

Fallibility

Recent Trends in Bias Temperature Instability,ut defect properties can be obtained from deeplyscaled devices, and that this information can allow projection of variability issues of future deeply downscaled CMOS devices. The chapter is concluded by showing the most promising technological solutions to alleviate both PBTI and NBTI.

Decibel

techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management.978-1-4939-4156-8978-1-4614-4078-9

Confidential

Typisierende Untergliederung der Stadt,ach device, measurements on hundreds or thousands of devices can be conducted concurrently. Test chip measurement results that provides a statistical insight on the parameters of BTI-related degradation process are also presented.

Cholecystokinin

Christopher R. Thomas,Juliana T. Magloireth each methodology. The impact of different technology options in FinFETs like gate-underlap, fin orientation, fin height, gate workfunction and independent control of the gates on the stability, power and performance of 6 T SRAMs is discussed.

有毒

On-Chip Characterization of Statistical Device Degradation,ach device, measurements on hundreds or thousands of devices can be conducted concurrently. Test chip measurement results that provides a statistical insight on the parameters of BTI-related degradation process are also presented.

痛打

Low Power Robust FinFET-Based SRAM Design in Scaled Technologies,th each methodology. The impact of different technology options in FinFETs like gate-underlap, fin orientation, fin height, gate workfunction and independent control of the gates on the stability, power and performance of 6 T SRAMs is discussed.

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