Titlebook: Amorphous and Crystalline Silicon Carbide IV; Proceedings of the 4 Cary Y. Yang,M. Mahmudur Rahman,Gary L. Harris Conference proceedings 19

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Mangle

INTER

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Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substratesoriented 6H-SiC substrates can be explained. Possibility of DPB-free 3C-SiC growth on a 15R-SiC substrate is predicted. By simultaneous chemical vapor deposition growth on well-oriented 6H-SiC(0001) and 15R-SiC(0001), the prediction was experimentally verified.

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Mri485

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https://doi.org/10.1007/978-3-322-88007-9 Si in the SiC films disappeared by applying a substrate bias, suggesting H radicals excited by electrons extract excess Si from the films. The plasma assists the dissociation of source materials and the cleaning effects of the growing surfaces by reactive species. The substrate bias enhances the surface reactions and crystallization.

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0930-8989 s.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods,characterization, andmo

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https://doi.org/10.1007/978-3-322-98951-2 future development, is discussed in detail. Growth mechanism and effects of off-direction and off-angle are described. As an advanced epitaxial growth, atomic level control in SiC crystal growth by gas source MBE is given.