| 期刊全称 | Amorphous and Crystalline Silicon Carbide IV | | 期刊简称 | Proceedings of the 4 | | 影响因子2023 | Cary Y. Yang,M. Mahmudur Rahman,Gary L. Harris | | 视频video | | | 学科分类 | Springer Proceedings in Physics | | 图书封面 |  | | 影响因子 | Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods,characterization, andmodels explaining experimental findings. The volume alsocontains the latest results in the exciting field of SiGe/Siheterojunction bipolar transistors.The reader will find this book valuable as a referencesource, an up-to-date and in-depth overview of this field,and, most importantly, as a window into the immense range ofreading potential applications of silicon carbide. It isessential for scientists, engineers and students interestedin electronic materials,high-speed heterojunction devices,and high-temperature optoelectronics. | | Pindex | Conference proceedings 19921st edition |
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发表于 2025-3-21 19:08:00
