Titlebook: Amorphous and Crystalline Silicon Carbide IV; Proceedings of the 4 Cary Y. Yang,M. Mahmudur Rahman,Gary L. Harris Conference proceedings 19

大范围流行

尊重

https://doi.org/10.1007/978-3-662-31626-9e activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer model in which crystal growth is controlled by diffusion of reactants in a stagnant layer.