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Titlebook: Simulation of Semiconductor Devices and Processes; Heiner Ryssel,Peter Pichler Conference proceedings 1995 Springer-Verlag Wien 1995 Senso

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Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas SeFurther we give an application example for the simulation of the sensitive reactions and the electronic device in their exchange. For that we use a conductivity type gas sensor with a polycrystalline ZnO active layer.
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Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device general purpose device simulator DESSIS. In this model, the dependence of the piezoresistive coefficients on temperature and doping concentration is included in a numerically tractable way. Using a commercial TCAD system (ISE), the practicability of the approach is demonstrated by performing a compl
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Simulating Deep Sub-Micron Technologies: An Industrial Perspective,d optimized. Process and device simulators can be a valuable tool in the evaluation and optimization process. As device dimensions approach the 0.10 µm regime, device and process simulators will be pushed to new levels. In device simulations, non-local hot electron effects and mobility modeling are
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Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation,ations based on a cellular geometry representation. The purpose of that algorithm is to avoid totally any discretization errors in those parts of the geometry which were not affected by the surface movements resulting from the simulation.
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A Data-Model for a Technology and Simulation Archive,litating simulation sharing, and recognition and reuse of technology modules. We have created a technology and simulation archive based on the World-Wide Web (WWW) data-model. The WWW data-model is very flexible in capturing the wide variety of data formats of technology and simulation related infor
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