Titlebook: Simulation of Semiconductor Devices and Processes; Heiner Ryssel,Peter Pichler Conference proceedings 1995 Springer-Verlag Wien 1995 Senso

Metamorphosis

A Programmable Tool for Interactive Wafer-State Level Data Processing,This paper presents a tool for initial and intermediate data processing at waferstate level. Geometric operations and analytical attribute calculations are combined with the graphical user interface and with some TCAD shell functionality to reduce the effort of both manual editing and automated operations within complex simulation flows.

休闲

支形吊灯

tooth-decay

Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas SeFurther we give an application example for the simulation of the sensitive reactions and the electronic device in their exchange. For that we use a conductivity type gas sensor with a polycrystalline ZnO active layer.

公理

An Improved Calibration Methodology for Modeling Advanced Isolation Technologies,on of the material properties of silicon nitride, an improved parameter set for the stress dependent oxidation models is derived. The calculated substrate stress using this new parameter set is compared with micro-raman spectroscopy stress measurements to validate the calibration methodology.

广大

过于平凡

Layout Design Rule Generation with TCAD Tools for Manufacturing,process and device simulations were used to estimate parametric yield, while functional yield was predicted with state-of-theart yield modeling tools. A spectrum of TCAD tools was therefore capable of estimating the resulting number of good chips per wafer for different sets of VLSI layout design rules.

打折

Cellular Automata Simulation of GaAs-IMPATT-Diodes,l accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.

incarcerate

Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface Staly determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of slow transients due to surface states is discussed.

演绎