Titlebook: Simulation of Semiconductor Devices and Processes; Heiner Ryssel,Peter Pichler Conference proceedings 1995 Springer-Verlag Wien 1995 Senso

粗野

可忽略

吹牛大王

Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface Staly determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of slow transients due to surface states is discussed.

DALLY

An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trappedngly important. In transient conditions, the dynamic change of trapped charge must be properly accounted for and two continuity equations ought to be considered in addition to the standard semiconductor equations. We propose here a novel methodology to solve this problem without increasing the numbe

photopsia

ALAMODE: A Layered Model Development Environment,ighly desirable. An object-oriented approach has been applied to implementing a 1-2-3D finiteelement . PDE solver. The control interface is based on Tcl and allows layered access to model definitions and solution techniques.

新娘

abysmal

隐士

壮丽的去

角斗士

Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device ncluded in a numerically tractable way. Using a commercial TCAD system (ISE), the practicability of the approach is demonstrated by performing a complete simulation sequence for realistic microdevices ranging from the layout design up to the analysis of the device operation.