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Titlebook: Simulation of Semiconductor Devices and Processes; Vol.5 Siegfried Selberherr,Hannes Stippel,Ernst Strasser Conference proceedings 1993 Spr

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书目名称Simulation of Semiconductor Devices and Processes
副标题Vol.5
编辑Siegfried Selberherr,Hannes Stippel,Ernst Strasser
视频video
图书封面Titlebook: Simulation of Semiconductor Devices and Processes; Vol.5 Siegfried Selberherr,Hannes Stippel,Ernst Strasser Conference proceedings 1993 Spr
描述The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out­ standing research and development results in the area of numerical process and de­ vice simulation. The miniaturization of today‘s semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc­ tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better mod
出版日期Conference proceedings 1993
关键词algorithms; development; modeling; semiconductor devices; simulation; software
版次1
doihttps://doi.org/10.1007/978-3-7091-6657-4
isbn_softcover978-3-7091-7372-5
isbn_ebook978-3-7091-6657-4
copyrightSpringer-Verlag Wien 1993
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Simulation of Self-Heating Effects in a Power p-i-n Diode,rigorous electrothermal model [1] implemented in the device/circuit simulator . [2]. Results of steady-state and high-voltage turn-off simulations with external electrical and thermal circuit elements are presented comparing the isothermal and self-heating cases.
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On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance,ontroversial issue. In this paper the influence of these flux components on device and circuit performance is evaluated by the example of a state of the art bipolar technology using mixed level 2D-device/circuit simulation.
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3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Cihas been used for simulation of the influence of layout parameters on the Safe Operating Area of a BJT and to study the mechanisms that start breakdown processes. For a thermally instable switch-on behaviour of a BJT, a comparison with measurements has been made.
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