Titlebook: Simulation of Semiconductor Devices and Processes; Vol.5 Siegfried Selberherr,Hannes Stippel,Ernst Strasser Conference proceedings 1993 Spr

结合

BOLUS

About Boltzmann Equations for Transport Modeling in Semiconductors,on the connection between the kinetic models and the fluids ones based on drift-diffusion or hydrodynamic equations. Asymptotic analysis gives hydrodynamic coefficients in terms of microscopic quantities and allows to derive accurate boundary conditions.

META

Applied TCAD in Mega-Bits Memory Design,sign purpose is one of the key topics in TCAD. Several critical phenomena, such as CMOS latchup etc., were also analyzed to verify feasibility and performance of the memory process. Two months of TCAD analysis were required, in which twelve sets of MOS model parameters were generated by VISTA with t

排他

Process Flow Representation within the VISTA Framework,rol module which allows for the definition of a simulation task by means of the simulation flow description, a representation of the process flow using symbolic names to call simulation tools. Large process flows can be modeled by using predefined sequences, where the calculation results of all inte

共栖

Modeling of VLSI MOSFET Characteristics Using Neural Networks,ountered with analytical representations of VLSI devices. The neural modeling methodology is discussed along with first results obtained for a 0.8 . CMOS process. The drain and substrate current-voltage characteristics of an n-channel MOSFET device are modeled over a drain current range of 10 orders

季雨

Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Cirially correlated random disturbances and deterministic process parameters distribution on a wafer. The method of coupling of a process/device simulator with a circuit extractor is proposed. Practical example of an operational amplifier design optimization is presented.

armistice

Simulation of Self-Heating Effects in a Power p-i-n Diode,rigorous electrothermal model [1] implemented in the device/circuit simulator . [2]. Results of steady-state and high-voltage turn-off simulations with external electrical and thermal circuit elements are presented comparing the isothermal and self-heating cases.

躺下残杀

MILL

On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance,ontroversial issue. In this paper the influence of these flux components on device and circuit performance is evaluated by the example of a state of the art bipolar technology using mixed level 2D-device/circuit simulation.

钝剑

2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Pad. Turn-off failure is investigated for a single GTO cell and on a wafer scale using a homogeneous wafer, which has in parallel a one segment GTO representing a local perturbation on the wafer by a slightly different doping or carrier lifetime profile. During the spike voltage extreme power densitie