Titlebook: Simulation of Semiconductor Devices and Processes; Vol.5 Siegfried Selberherr,Hannes Stippel,Ernst Strasser Conference proceedings 1993 Spr

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Conference proceedings 1993iated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology i

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Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation,nt Krylov subspace. An advantage of this method over the classical ones is that the Jacobian is not stored and that little storage is required since the method restarts periodically whenever the size of the Krylov subspace reaches a maximum value fixed by the user.

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Applied TCAD in Mega-Bits Memory Design,formance of the memory process. Two months of TCAD analysis were required, in which twelve sets of MOS model parameters were generated by VISTA with the computational cost of six hours on six CPUs of SGI-IRIS machines.

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Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS,ing capacitances and the floating gate charge. With this method write time simulation is performed. Making use of selfconsistent trapping calculation, available in our version of MINIMOS, EEPROM write time degradation due to electron trapping in the gate oxide layer is estimated.

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h was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Te