Titlebook: Silver Metallization; Stability and Reliab Daniel Adams,Terry L. Alford,James W. Mayer Book 2008 Springer-Verlag London 2008 Diffusion.PAS.

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Thermal Stability,istivity can reduce the . delays and high power consumption. Also, silver has higher electromigration resistance than aluminum and the same or even higher electromigration resistance than copper. However, Ag thin film agglomeration has been observed on many substrates at high temperatures and considered as a drawback of silver metallization.

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Introduction,resistivity lower than the currently used Al(Cu) alloy [.]. As a result, higher current densities can be imposed on the metal lines and faster switching speeds can be achieved, due to the lower RC time delay [.].

lattice

Diffusion Barriers and Self-encapsulation,ors have investigated the behavior of Ag on SiO./Si substrates [.],[.]. The addition of a thin Au layer between the Ag and Si was found to improve the stability of the interface by forming an intermixed region, resulting in a lowering of the interfacial energy of the Ag/Si system [.].

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Introduction,e development of advanced ultra large scale integration (ULSI) and gigascale integration (GSI) technologies will place stringent demands on future interconnect and metallization schemes [.]. To decrease the resistance-capacitance (RC) signal delays, the circuit can be fabricated with a metal having

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Silver Thin Film Characterization,erization is the instrumentations that use X-ray and ion beams to probe the properties of the film. This work discusses two techniques in thin film analysis, Rutherford backscattering spectrometry (RBS) [.],[.] and X-ray diffractrometry (XRD) [.]

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Diffusion Barriers and Self-encapsulation,vice reliability. The application of silver in multilevel metallization schemes require thermal stability when in contact with other metal layers and dielectrics. Therefore, developing a suitable diffusion barrier to retard the diffusion of Ag into adjacent materials and to prevent agglomeration is

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