Titlebook: Silver Metallization; Stability and Reliab Daniel Adams,Terry L. Alford,James W. Mayer Book 2008 Springer-Verlag London 2008 Diffusion.PAS.

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Silver Electromigration Resistance,trend to replace Al(Cu) with Cu is becoming apparent for ultra large scale integration (ULSI) applications. Ag, as the most conductive metal, has also drawn attention as an interconnect material for some potential applications in ULSI [.],[.]. Ag has some advantage over Cu in terms of the conductivity.

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1619-0181 nterconnect material for integrated circuit technology.Valua.Silver has the lowest resistivity of all metals, which makes it an attractive interconnect material for higher current densities and faster switching speeds in integrated circuits. Over the past ten years, extensive research has been condu

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978-1-84996-705-1Springer-Verlag London 2008

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Silver Metallization978-1-84800-027-8Series ISSN 1619-0181 Series E-ISSN 2365-0761

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Daniel Adams,Terry L. Alford,James W. MayerFirst book to discuss current knowledge of silver metallization and its potential as a favourable candidate for implementation as a future interconnect material for integrated circuit technology.Valua

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Silver Thin Film Characterization,erization is the instrumentations that use X-ray and ion beams to probe the properties of the film. This work discusses two techniques in thin film analysis, Rutherford backscattering spectrometry (RBS) [.],[.] and X-ray diffractrometry (XRD) [.]

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Summary,ermal stability is covered. During Ti and Al transport to form the encapsulating layers, the Ag films develop <111> texture. Integration with low-K dielectrics such as paralene has been demonstrated. Encapsulated Ag films have superior resistance to electromigration degradation.

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