Titlebook: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications; Jacopo Franco,Ben Kaczer,Guido Groeseneken Book 2014 Sprin

Palpitation

ALLAY

ffektive Masse, negative Elektronen und positive Defektelektronen oder “Löcher”. Außerdem wirkt am Ort unseres nun “quasifreien” Elektrons das von außen angelegte Feld nicht allein, da es gleichzeitig die negativen Valenzelektronenhüllen gegen die positiven Rümpfe der Kristallatome verschiebt. Diese

Friction

Archipelago

纠缠,缠绕

突变

使残废

Negative Bias Temperature Instability in (Si)Ge pMOSFETs,ference devices. The interplay between NBTI and Body Biasing on Si and SiGe devices is discussed, showing that it can yield further benefit for the novel technology. A model capable of explaining all the experimental observations is proposed. Finally, some considerations about the correlation of device performance and reliability are made.

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Negative Bias Temperature Instability in Nanoscale Devices,ristics scales reciprocally with the device area, and we demonstrate the measurement of the entire I.-V. characteristic of planar pMOSFETs before and after the capture of a single hole. Finally, the body bias is shown to modulate the impact of individual charged gate oxide defects on the device characteristics.

审问,审讯

Popcorn

Introduction, by high mobility channel technologies which are currently under development for possible implementation in future CMOS nodes. We discuss how ultimate device scaling and stochastic device-to-device variability in nanoscale technologies pose significant reliability constraints.