找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications; Jacopo Franco,Ben Kaczer,Guido Groeseneken Book 2014 Sprin

[复制链接]
查看: 20716|回复: 39
发表于 2025-3-21 18:32:34 | 显示全部楼层 |阅读模式
书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
编辑Jacopo Franco,Ben Kaczer,Guido Groeseneken
视频video
概述Review of CMOS scaling trends beyond the conventional geometric scaling era, and of advanced NBTI measurement techniques and modeling attempts.Complete reliability study of the novel (Si)Ge channel qu
丛书名称Springer Series in Advanced Microelectronics
图书封面Titlebook: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications;  Jacopo Franco,Ben Kaczer,Guido Groeseneken Book 2014 Sprin
描述.Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability..This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated..The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finF
出版日期Book 2014
关键词CMOS Technology Nodes; Channel Hot Carriers; Design Optimization; Device Reliability; Electron Device Re
版次1
doihttps://doi.org/10.1007/978-94-007-7663-0
isbn_softcover978-94-024-0205-6
isbn_ebook978-94-007-7663-0Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer Science+Business Media Dordrecht 2014
The information of publication is updating

书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications影响因子(影响力)




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications影响因子(影响力)学科排名




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications网络公开度




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications网络公开度学科排名




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications被引频次




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications被引频次学科排名




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications年度引用




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications年度引用学科排名




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications读者反馈




书目名称Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications读者反馈学科排名




单选投票, 共有 1 人参与投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 21:34:31 | 显示全部楼层
Conclusions and Perspectives,In this final Chapter, a high level summary of the main results presented in the previous Chapters is given. Perspectives for future studies of similar technologies are also outlined.
发表于 2025-3-22 03:12:18 | 显示全部楼层
发表于 2025-3-22 06:21:22 | 显示全部楼层
发表于 2025-3-22 10:49:10 | 显示全部楼层
发表于 2025-3-22 15:49:31 | 显示全部楼层
发表于 2025-3-22 18:11:56 | 显示全部楼层
发表于 2025-3-22 23:58:45 | 显示全部楼层
发表于 2025-3-23 02:08:26 | 显示全部楼层
发表于 2025-3-23 08:25:36 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-8 09:38
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表