Titlebook: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications; Jacopo Franco,Ben Kaczer,Guido Groeseneken Book 2014 Sprin

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Techniques and Devices, of the studied (Si)Ge devices is described, highlighting the impact of the main process parameters on the device electrical characteristics. Finally, the used on-wafer structures are described, with particular focus on a dedicated Poly-Si heater structure, developed for accelerated reliability tests.

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Negative Bias Temperature Instability in (Si)Ge pMOSFETs,eters on the device reliability is discussed. The experimental learning is then combined to propose a reliability-oriented gate stack optimization, which is shown to enable ultrathin EOT devices with sufficient reliability, i.e., 10 years of continuous operation at nominal . .. The demonstrated resu

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1437-0387 ts.Complete reliability study of the novel (Si)Ge channel qu.Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively

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Jacopo Franco,Ben Kaczer,Guido Groesenekene die Befragten verfolgen, wurden zunächst 16 Aussagen zu verschiedenen Kommunikationsabsichten in einer vierstufigen Skala abgefragt. Auf diese Weise konnten die Teilnehmer differenziert abwägen, ob die verschiedenen Berufsziele ihrer Meinung nach „überhaupt nicht“ bis „voll und ganz“ zutreffen. Di