Titlebook: Rare Earth Oxide Thin Films; Growth, Characteriza Marco Fanciulli,Giovanna Scarel Book 2007 Springer-Verlag Berlin Heidelberg 2007 Depositi

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,Scientific and Technological Issues Related to Rare Earth Oxides: An Introduction, as of complex oxides based on rare earth elements. Most of the motivations justifying this effort are found in the field of microelectronics – especially in the search of high dielectric constant oxides as candidates to substitute SiO. – and these will be mostly discussed. Open problems and issues

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Atomic Layer Deposition of Rare Earth Oxides,ary rare earth oxide (REO) thin films have been grown by ALD using various precursor approaches, which are discussed starting with the .-diketonates (thd-complexes) which require ozone to form the oxide. The focus of this review is on the most recent developments in the precursor chemistry, viz. the

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MOCVD Growth of Rare Earth Oxides:The Case of the Praseodymium/Oxygen System,ss. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners..In this Chapter, an over

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Requirements of Precursors for MOCVDand ALD of Rare Earth Oxides,o the coordination chemistry of the rare earth elements, and then describes the strategies that have been employed to design and synthesize rare earth complexes with reasonable volatility. The chemical requirements of precursors for MOCVD and ALD are outlined, and it is shown that these requirements

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,Growth of Oxides with Complex Stoichiometry by the ALD Technique, Exemplified by Growth of La,,,,, . This review will cover some of the milestones on the way to controlled deposition of compounds with intricate stoichiometry with the ALD technique. The survey shows that some of the foreseen obstacles might not necessarily be that severe. The growth of films of La.Ca.MnO. will be used as a model t

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Fabrication and Characterization of Rare Earth Scandate Thin Films Prepared by Pulsed Laser Depositarth scandates (. ScO., where . is a rare earth element) were recently proposed as candidate materials for the replacement of SiO. in silicon MOSFETs in either amorphous or epitaxial form. Epitaxial rare earth scandate thin films have been prepared by pulsed laser deposition technique (PLD) on diffe

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