Titlebook: Optical Properties of Semiconductors; N. G. Basov Book 1976 Consultants Bureau, New York 1976 semiconductor

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Overview: 978-1-4615-7550-4978-1-4615-7548-1

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The Lebedev Physics Institute Serieshttp://image.papertrans.cn/o/image/702655.jpg

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Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lase intensity of the spontaneous radiation emerging from a high-pressure chamber was very low when the pulse duration was 1–3 .sec (this intensity exceeded only slightly the noise level of the recording system) the main measurements of the spectra were carried out under stimulated emission conditions at liquid-nitrogen temperature.

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Chapter IV Change in Absorption Coefficient of Undoped GaAs due to Strong Optical Excitation is less than the corresponding forbidden-bandwidth. It is suggested in [53] that this may be due to the narrowing of the forbidden band as a result of screening of the crystal field by free carriers and because of interaction of carriers with one another. These two effects occur also in systems of electrons and holes close to degeneracy [55].

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Experimental Method determined by a synchronous detection method similar to that described in [55]. This method was modified by replacing a generator of high-power pulses based on a hydrogen thyratron with a small-size semiconductor pulse generator [56], which was essentially a current aplifier (emitter follower). Thi

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