Titlebook: Optical Properties of Semiconductors; N. G. Basov Book 1976 Consultants Bureau, New York 1976 semiconductor

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书目名称Optical Properties of Semiconductors影响因子(影响力)




书目名称Optical Properties of Semiconductors影响因子(影响力)学科排名




书目名称Optical Properties of Semiconductors网络公开度




书目名称Optical Properties of Semiconductors网络公开度学科排名




书目名称Optical Properties of Semiconductors被引频次




书目名称Optical Properties of Semiconductors被引频次学科排名




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书目名称Optical Properties of Semiconductors年度引用学科排名




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书目名称Optical Properties of Semiconductors读者反馈学科排名

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Measurement Methode photoluminescence spectra can be used to obtain most reliable information on the physics of recombination processes because optical excitation does not change significantly the crystal lattice structure.

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Magnetically Tuned Stimulated Raman Emission from Indium Antimonidecomparing various types of Raman scattering of light in semiconductors we shall concentrate on the Raman scattering involving optical plasmons and electron transitions between Landau levels in semiconductors [110].

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Resonance Luminescence of Condensed Exciton Phase in Germaniumthreshold, which depended on the excitation rate, The integrated intensity of this infrared luminescence (. > 80 .) was very high so that we could study in detail its properties, particularly the spectral composition and the dependences on the temperature and excitation rate [64, 65].

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Energy Spectra and Collective Properties of Excitons in Semiconductorses of electrons and holes only strengthen the inequalities of Eq.(1). It follows that the energy spectrum of excitons can be calculated using the effective mass approximation in which an exciton can be treated as a two-body system.

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Methods Used in Far-Infrared Investigations of Excitons in SemiconductorsAn experimental investigation of the energy spectrum and collective properties of excitons was carried out by the present author using mainly the far-infrared absorption and luminescence spectra of excited germanium.