Titlebook: Optical Properties of Semiconductors; N. G. Basov Book 1976 Consultants Bureau, New York 1976 semiconductor

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Bumble

Energy Spectra and Collective Properties of Excitons in Semiconductorsarticles, produces bound electron-hole states in semiconductors and these are known as excitons. Since the Coulomb interaction in a medium with a high permittivity ϰ (in the case of semiconductors, ϰ ~ 10) is much weaker than in free space, the binding energy of an exciton ℰ. is relatively small and

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Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germaniumled [44] a reduction in the transmission of germanium which occurred at low temperatures (T ⪝ 2°K) over a wide spectral range. In these experiments, the quantity measured directly was the ratio of the transmission of a sample in the case of optical excitation t. to the “dark” transmission t. in the

OGLE

Resonance Luminescence of Condensed Exciton Phase in Germaniumons, a long-wavelength infrared resonance luminescence [44]. Like the resonance absorption, the luminescence appeared at temperatures below a certain threshold, which depended on the excitation rate, The integrated intensity of this infrared luminescence (. > 80 .) was very high so that we could stu

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Collective Interactions of Excitons in Semiconductorsappearance of discrete levels in the forbidden band of a semiconductor. In the case of semiconductors with a high permittivity (ϰ ≈ 10) and low effective carrier masses (m ≈ 0.01m.-01m.) we can expect formation of excitons with a binding energy. . ≈ 10. eV (this is an order-of-magnitude estimate) an

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Chapter IV Change in Absorption Coefficient of Undoped GaAs due to Strong Optical Excitation is less than the corresponding forbidden-bandwidth. It is suggested in [53] that this may be due to the narrowing of the forbidden band as a result of screening of the crystal field by free carriers and because of interaction of carriers with one another. These two effects occur also in systems of

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Chapter V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rateenter of the Brillouinzone and the corresponding edges of the conduction band are in six equivalent crystallographic positions along the <100> axis. In the case of semiconductors with extrema located at different points in the k space we can have optical transitions which create electron—hole pairs