Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio

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Compensating Layers in GaAs by Ion Implantation: Application to Integrated Opticsa few examples of optical waveguides in near IR region realized by H. implantation and we discuss the using 0. implanted layers to realize light guides as the compensation at high anneal temperatures is stable.

FATAL

Electrical Properties of Proton Bombarded N-Type GaAsckness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.

鼓掌

Photoluminescence of Zinc Implanted n-Type GaAs (100) orientation were impIanted with Zn in a dose range of 5 x 10 to 5 x 10 ions/cm. and were subsequently annealed for 20 min at temperatures between 600°C and 900°C. A well-defined single emission peak due to Zn acceptor level was obtained in samples implanted with a dose of 1 x 10 ions/cm and a

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Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantationat 350°C with N ions to concentration 10.. 10. cm.. Two conspicuous bands, in the general locations of 599.5 nm and 618 nm at 2K, appear as a result of annealing. They are due to isoelectronic impurities and the narrow band (599.5 nm) is attributed to ‘A’ line and the broad band (618 nm) is to NN li

清澈

Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and

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Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaPplanted at room temperature, in order to know effects of damage difference between Ga and P on electrical properties of amphoteric impurity in GaP. As results, it was found that total amount of P damage as implanted state tended to become more than that of Ga damage with decrease of implanted ion do

CLEAR

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