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Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio

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发表于 2025-3-21 16:34:11 | 显示全部楼层 |阅读模式
书目名称Ion Implantation in Semiconductors
副标题Science and Technolo
编辑Susumu Namba
视频video
图书封面Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio
描述The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I w
出版日期Book 1975
关键词ESR; Plantation; chemistry; corrosion; crystal; diffusion; electron; metals; paper; scattering; semiconductor;
版次1
doihttps://doi.org/10.1007/978-1-4684-2151-4
isbn_softcover978-1-4684-2153-8
isbn_ebook978-1-4684-2151-4
copyrightSpringer Science+Business Media New York 1975
The information of publication is updating

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发表于 2025-3-21 20:45:26 | 显示全部楼层
Book 1975antation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Pa
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Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantationne. In the measurement at 77K integrated intensity of lightly implanted samples exceeds 1000 times as large as that of unimplanted one. Emission intensity becomes nearly the same order as that of direct GaAsP. This is attributed to the emission due to the NN line.
发表于 2025-3-22 12:26:07 | 显示全部楼层
Behaviors of Ga and P Damages Introduced by Ion-Implantation into GaPses. Moreover, .C implanted GaP showed p-type conductivity and carrier concentration also tended to become higher with decrease of doses. And these results supported our expectation that electrical properties of amphoteric impurities in GaP could be controlled, using damage difference between Ga and P caused by ion-implantation.
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Photoluminescence of Zinc Implanted n-Type GaAseatment. Compensation of thermally induced Ga-vacancies by implanted Zn atoms plays a dominant role in the recovery process. In-depth variation of photoluminescence spectrum was also studied by succesively etching the implanted surface. This technique was found very useful for profiling implanted atoms and vacancies.
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Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38iously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.
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The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implantedtroduced by implantation; one is dominant at low doses and responsible for a broad band emission centered at 1.31 eV, and the another is Ga vacancy-Se donor complex, which is increased with dose and affects the enhanced diffusion. It is suggested that the broad band at 1.31 eV is attributed to As vacancy.
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ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP700 or 750 °C anneal, the hyperfine spectrum of the implanted N. (with illumination at 5180 or 7050 A at 4.2 K) which is evidenced 3 lines centered about a g-value of 2.017, and the spectrum due to the secondary defects of which g-value is 2.0030 ± 0.0004 and ΔHms1~6 gauss have been detected.
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