Titlebook: Ion Implantation in Semiconductors; Science and Technolo Susumu Namba Book 1975 Springer Science+Business Media New York 1975 ESR.Plantatio

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E. B. Stoneham,J. F. Gibbonsn auch geeignet für Studierende der Erziehungswissenschaften und im Lehramtsstudium sowie für alle, die sich beruflich oder privat für die faszinierenden Entwicklungen im Kindes- und Jugendalter interessieren. .978-3-662-59192-5Series ISSN 0937-7433 Series E-ISSN 2512-5214

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Ion Implantation of Cd and Te in GaAs Crystalscs by means of He ion channeling and photoluminescence measurements. It was found by channeling angular scan measurements that high substitutional fraction of Te and Cd was obtained by the implantations between 200 and 300°C. For implantations above 200°C defect peak appears at the depth deeper by 3

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Implantation of Silicon Into Gallium Arsenidegh electron concentration. The dependence of sheet resistivity, surface carrier concentration and mobility on dose, implantation temperature and annealing temperature was determined. Peak doping levels are about 3x10... for 340°C implantation with 10.cm. dose. Diffusion of implanted silicon was also

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The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0., and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.