Titlebook: Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication; From Particle Scale Jianfeng Luo,David A. Dornfeld

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Material Removal Mechanism in CMP: A Comprehensive Model of Abrasive Particle, Pad Asperity and Wafthat the interconnects between multi-layer chips are achieved reliably and that the thickness of dielectric materials is uniform and sufficient. During CMP processes, a wafer is rotated about its axis while being pressed facedown by a carrier and a carrier film against a polishing pad/belt covered w

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Effects of Abrasive Size Distribution in CMP, their interactions with other important input values such as the pad, chemical and wafer materials. The effect of abrasive size distribution in chemical-mechanical planarization has long been observed [4.1–4.7] [4.13] [4.14]. For example, experimental results show that there is an inverse proportio

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Three-Dimensional Feature-Scale Modeling of CMP,opography evolution. The influences of lateral directional parameters such as line width on the topography evolution in the vertical direction can be evaluated using the look-up table based semi-two dimensional model. The advantage of the model is that the computation time is minimal. It can be inte

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Wafer-Scale Modeling of CMP,erial removal rate at the wafer edge, also known as edge effect, requires an exclusion of the wafer edge after CMP. This reduces the yield of the process. In the shallow trench isolation and copper damascene process, the uneven material removal rates across the wafer cause an over-polishing in the r

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fer CMP from an engineering ‘art’ to an engineering ‘scienceChemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices

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Effects of Abrasive Size Distribution in CMP,fer surface have also been observed and reported [4.5–4.6]. Beside the experimental research, however, there is a general lack of models which can accurately predict the performance of consumables, and specially, the abrasive particles. This limits the application of the experimental results for the optimization of the CMP process.

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