Titlebook: Early Stages of Oxygen Precipitation in Silicon; R. Jones Book 1996 Kluwer Academic Publishers 1996 Magnetic Resonance.crystal.modeling.se

oxidant

愤怒事实

Phenothiazines

美丽的写

Hydrogen - Oxygen Interactions in Silicon,oming available from experiment as well as theory. This paper summarizes the experimental and theoretical work on H - 0 interactions, with emphasis on the issue of H-enhanced diffusion of interstitial 0. Preliminary results of molecular dynamics simulations are also presented.

护航舰

积习已深

Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon,n. Grown-in defects in Czochralski-grown silicon seem to be divided into two kinds of defects. One causes the degradation of gate oxide integrity and the other acts as the nucleation centers for oxygen precipitation at relatively low temperatures. The generation processes of these kinds of defects are discussed.

逗留

Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment,) spectroscopy, or absorption and luminescence associated with electronic transitions involving the defect. In the course of this workshop, we will have the chance to learn in detail how each of these have contributed to our understanding of oxygen and its complexes in silicon.

MANIA

Comprise

FATAL

The Role of Trivalent Oxygen in Electrically Active Complexes,ex. A third oxygen bond can also be formed in defect complexes with other impurities. Based on . calculations, stable complexes of trivalent oxygen with a Si self-interstitial (w/o the presence of hydrogen) or with nitrogen are predicted. The relation of these defects to thermal double donors and shallow thermal donors are discussed.