Titlebook: Early Stages of Oxygen Precipitation in Silicon; R. Jones Book 1996 Kluwer Academic Publishers 1996 Magnetic Resonance.crystal.modeling.se

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Book 1996e‘ what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long duratio

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The Initial Stages of Oxygen Aggregation in Silicon: Dimers, Hydrogen and Self-Interstitials,tion effects and the apparent requirement for rapid dimer diffusion. Interactions of O. atoms with vacancies and self-interstitials (I-atoms) are re-examined and it is shown that the presence of hydrogen leads to enhanced O. diffusion that is the rate limiting step in the aggregation process. Self-i

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Infrared Studies of the Early Stages of Oxygen Clustering in Silicon,ption bands. Several vibrational bands have been reported in the wavenumber range 975–1015 cm.. These bands correlate well with the formation of thermal donors (TDs). Bands at 975, 988 and 999 cm. have been found to be related to the three first appearing TDs. A band at 1006 cm. correlates with the

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Magnetic Resonance Investigations of Thermal Donors in Silicon,with donor activity. By the method of electron paramagnetic resonance (EPR) two prominent spectra, labelled Si-NL8 and Si-NLIO, respectively, were observed and were associated to paramagnetic states of these centers. On the basis of angular dependent resonance patterns the centers were described wit

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Magnetic Resonance of Heat Treatment Centres in Silicon,ing at a temperature of 450–460 °C “shallow” electrically active defects are formed which are often called “thermal donors”. Although their existence has been known for a long time [1,2], there is not yet a clear picture about their microscopic structures. These “heat treatment centres” have been in

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Effect of Hydrogen on Oxygen-Related Defect Reactions in Silicon at Elevated Temperatures,als. Hydrogen was introduced into the crystals by high-temperature (900–1200°C) annealing in hydrogen gas ambient or by exposure in hydrogen plasma at temperatures 350–450°C..The presence of hydrogen is found to influence significantly the behaviour of thermally- and radiation-induced defects and to

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Passivation of Thermal Donors by Atomic Hydrogen,ls. The TDs are completely reactivated at temperatures (. ≤ 200 °C) well below their formation temperature (. ≈ 450 °C). The dissociation of the hydrogen complexes is studied by means of infrared absorption, capacitance voltage profiling and deep level transient spectroscopy. Characteristic differen

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Oxygen-Carbon, Oxygen-Nitrogen and Oxygen-Dimer Defects in Silicon,re given for X-O. complexes where X is interstitial C, N or O. For . = 2, the first defect, C-O. has been assigned to the P-centre giving a PL line at 0.767 eV and seen in Cz-Si annealed around 450°C. The second, N-O., has properties consistent with a nitrogen related shallow thermal donor. We have