Titlebook: Early Stages of Oxygen Precipitation in Silicon; R. Jones Book 1996 Kluwer Academic Publishers 1996 Magnetic Resonance.crystal.modeling.se

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Thermal Double Donors in Silicon: A New Insight into the Problem,viours of oxygen dimers and trimers, and the IR absorption bands at 1012 cm. and 1006 cm. is found. It is shown that some features of the enhanced oxygen diffusion and TDD generation are not consistent with a conception of the very fast diffusing oxygen dimers. Along with dimers the mobility of trimers and the first TDD species is suggested.

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Lethargic

https://doi.org/10.1007/978-3-322-97057-2nterstitial generation is analysed and it is concluded that TD-defects cannot be 0.I. clusters with a large number of I-atoms. It has been proposed that TD defects, partially passivated with H (or D) atoms, give rise to the STD and NL10 spectra. Different spectra are generated in Al-doped Si.

itinerary

Die Nachfrageseite des Baumarktes,also found that a (C-H)0. defect has very similar electronic properties, and this implies that shallow thermal donors do not have a unique composition. The structure and migration energy of the oxygen dimer is considered and the dimer is found to migrate very much faster than a single oxygen atom.

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Besonderheiten der Bauproduktion,ex. A third oxygen bond can also be formed in defect complexes with other impurities. Based on . calculations, stable complexes of trivalent oxygen with a Si self-interstitial (w/o the presence of hydrogen) or with nitrogen are predicted. The relation of these defects to thermal double donors and shallow thermal donors are discussed.

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https://doi.org/10.1007/978-3-663-10941-9 effect on the luminescence centres created in both float-zone (FZ) and CZ Si and that several luminescence centres actually contain hydrogen. It has also been demonstrated that these and other centres can be made optically inactive if too much hydrogen is present.

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Book 1996 The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant