Titlebook: Crucial Issues in Semiconductor Materials and Processing Technologies; S. Coffa,F. Priolo,J. M. Poate Book 1992 Springer Science+Business

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978-94-010-5203-0Springer Science+Business Media Dordrecht 1992

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nce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.

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The History of Rope Transportation, (DLTS) and current-voltage (IV) measurements. For both undecorated and Fe-decorated stacking faults similar deep level spectra were found with a dominant level at Ev+0.5 eV. For diodes with decorated stacking faults the IV-measurements reveal a drastic enhancement of the reverse current which correlates with the Fe concentration.

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Scaling for Convective Boundary Layers gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.

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Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersnce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.

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