Titlebook: Crucial Issues in Semiconductor Materials and Processing Technologies; S. Coffa,F. Priolo,J. M. Poate Book 1992 Springer Science+Business

Prognosis

Mössbauer Study of the Dx-Center in Te-Implanted AlxGa1-xAs gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.

六边形

Fourier and Fourier-Mehler Transforms,In the present paper are shown the characteristics of devices successfully employing PECVD a-SiO. as gate dielectric. Field effect analysys on these devices were performed making use of two different methods whose equivalence has been proven.

放大

Applications to Quantum Field Theory,Silicon deposits are made on different substrates by injecting silicon powder in a plasma torch (Ar+H.). The self-supported deposits are then subjected to recrystallization by zone melting to improve their grain size and some electronic properties.

罗盘

BOLT

N. Isyumov,S. Helliwell,S. Rosen,D. LaiAfter twenty years of surface science one may ask the question: what impact is there on semiconductor processing today? The answer is given by looking at developments in the equipment industry.

faddish

inventory

摘要记录

On the Dirty Contacts on N-Type SiliconElectrical contacts (sometimes referred to as dirty contacts) realized on n-type Si at room temperature and their effects on the rectifying characteristics of Au/Si Schottky diodes have been analyzed.

银版照相

oblique

Defect Aspects of Advanced Device Technologiesrocess-induced defect formation from the very beginning of the development of new device generations to achieve economic yields and adequate device reliability lateron in mass production. Here, we focus on detrimental defects in electrically acitve regions of the silicon substrate (”crystal defects”