Titlebook: Ultra-Fast Silicon Bipolar Technology; Ludwig Treitinger,Mitiko Miura-Mattausch Textbook 1988 Springer-Verlag Berlin Heidelberg 1988 VLSI.

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Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects,lation techniques have realized not only a high packing density but also reduced collector-substrate, wiring-substrate and base- collector parasitic capacitances. By using these techniques, high performance bipolar devices such as ultra-high-speed ECL RAMs, gate arrays and microprocessors have been

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A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI, high performance prescaler IC and high-gate-density master- slice LSI. The main feature of this process, for reduction of both the base resistance and the capacitance, is the silicidation of the base contact which is opened by employing self-alignment technology. A 1/128, 1/129 two-modulus prescale

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Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar transistors,echnology. High cutoff frequencies of 14 GHz in the downward-mode and 4 GHz in the upward-mode operations have been obtained. Using these transistors, high-speed circuits are constructed and their excellent performance is nearly equal to that of GaAs devices. Other high-speed transistor structures a

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Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors,ic base. BSA technology has been successfully combined with the RTA (Rapid Thermal Annealing) technique to fabricate sub-100nm base self-aligned bipolar transistors. The typical BSA transistor has h. = 70, BV. = 7 V and BV. = 3 V. BSA technology is likely to prove extremely useful in future bipolar VLSIs.

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A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI,r IC comprised of 1.5 μm SCOT transistors has been improved to a high operation of 2.1 GHz at 56 mW power dissipation. An ECL 18K-gate masterslice has been developed by a Variable Size Cell (VSC) approach, employing the SCOT process.