Titlebook: Structure-Property Relationships in Surface-Modified Ceramics; Carl J. McHargue,Ram Kossowsky,Wolfgang O. Hofer Book 1989 Kluwer Academic

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Mechanisms of Ion Beam Mixingut 10–25%. In ion beam mixing, for every ion several hundred atoms of the substrate and the overlayer are intermixed. Therefore the required ion doses are not so high that the sputtering limit is reached.

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Ion Beam Mixing of Fe in Si02: Structural and Optical Propertiesnic devices. In this paper we focus our attention both on mixing mechanisms and on the microstructural and optical properties of the interfacial region of the Kr irradiated Fe/Si0.system before and after thermal annealings for 5 h at 500 and 700°C.

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Furnace Annealing of Sapphire Surfaces Amorphised by Ion Implantationimplantation to produce further changes in the microstructure and the phases present in the implanted layer, in order to optimise its beneficial properties. Thus it is important to understand the fundamental atomic transport processes occuring during post implantation annealing.

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Tribological Properties of Ceramics Modified by Ion Implantation and by Ion Beam-Assisted DepositionCeramic materials are increasingly being used as rolling or sliding parts of machines, for example, as bearings or seals, and surface treatments to enhance the friction and wear performance of ceramics have become more and more important.

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978-94-010-6931-1Kluwer Academic Publishers 1989

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Structure-Property Relationships in Surface-Modified Ceramics978-94-009-0983-0Series ISSN 0168-132X

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NATO Science Series E:http://image.papertrans.cn/t/image/880296.jpg

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https://doi.org/10.1007/978-94-009-0983-0Helium-Atom-Streuung; Polymer; STEM; alloy; ceramics; coating; crystal; spectroscopy; thermochemistry

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Ion Beam Mixing Of Metals and Ceramics — Material Considerationst that a 1983 review tabulated data for 38 bilayer and 25 multilayer systems (1). The initial models for mixing focused on the dynamics of ion-solid interactions and produced models based on direct recoils, cascades, and enhanced diffusion due to radiation-produced defects.

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