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Titlebook: Structure-Property Relationships in Surface-Modified Ceramics; Carl J. McHargue,Ram Kossowsky,Wolfgang O. Hofer Book 1989 Kluwer Academic

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Ion-Beam Alloying and Thermochemistry of Ceramics at High Temperaturesly there has been considerable interest in high fluence implantation into heated substrates in the semiconductor industry, where this “hot” implantation process has been shown to produce buried dielectric layers in Si [Ref. 1]. Hot implantation into metals [Ref. 2] and ceramics [Ref. 3] has also bee
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Furnace Annealing of Sapphire Surfaces Amorphised by Ion Implantationerties. The ion beam induced alterations in surface properties are brought about by one or more of the following factors — microstructure of implanted layer, residual (compressive) stress, lattice damage and defect-impurity interactions. Implantation parameters such as energy, ion dose, ion species
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Thin Film and Near Surface Characterization Using Indentation Systemsin industry. For example, thin metallic films are used for electrical contacts and for diffusion barriers in the semiconductor industry. Thin ceramic films are used as optical coatings for light emitting diodes and for optical windows. Thin films are also used to enhance wear resistance, and to prov
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The Displacement Cascade in Solidsel to calculate an exposure parameter such as displacements per atom (dpa) as a method of comparing different irradiations and as a radiation-induced defect source term in modeling the effects of the irradiation.
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