| 书目名称 | Strain-Induced Effects in Advanced MOSFETs |
| 编辑 | Viktor Sverdlov |
| 视频video | |
| 概述 | comprehensive overview of strain techniques.accurate description of strain induced modifications of the valence and conduction bands.overview of transport modeling in strain devices.Includes supplemen |
| 丛书名称 | Computational Microelectronics |
| 图书封面 |  |
| 描述 | Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. |
| 出版日期 | Book 2011 |
| 关键词 | semiconductor devices; strain technique; transport modeling |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-3-7091-0382-1 |
| isbn_softcover | 978-3-7091-1933-4 |
| isbn_ebook | 978-3-7091-0382-1Series ISSN 0179-0307 |
| issn_series | 0179-0307 |
| copyright | Springer-Verlag/Wien 2011 |
发表于 2025-3-21 17:06:24
