Titlebook: Solving Irregularly Structured Problems in Parallel; 5th International Sy Alfonso Ferreira,José Rolim,Shang-Hua Teng Conference proceedings

MAG

single

In addition, Vitturo et al. have recently indicated that deep levels in the bulk of the materials used for most Schottky barrier formation studies, ie. liquid-encapsulated Czochralski GaAs, might be responsible for the narrow range of EF pinning in the gap, and that pinning occurs in a much wider ra

SEVER

P.M. Selwood,M. Berzins,J.M. Nash,P.M. Dewh metalsemiconductor system, the surfaces states pinning Ef will depend on the bonding at the interface. Batra and Ciraci5 recentiy suggested that the nature of the pinning states can also change as a function of metal coverage. Their study5 of the pseudomorphic growth of Al -Ge(001) showed that at

鸟笼

Tamara G. KoldaIn addition, Vitturo et al. have recently indicated that deep levels in the bulk of the materials used for most Schottky barrier formation studies, ie. liquid-encapsulated Czochralski GaAs, might be responsible for the narrow range of EF pinning in the gap, and that pinning occurs in a much wider ra

TIGER

Robert Garmannhis last problem is well defined only if one takes into account the interface chemical processes which determine the real nature of the solids constituting the interface. Moreover, a better understanding of interface chemistry can be greatly useful in order to identify those systems in which the rea

gout109

嬉耍

Andrew J. Cleary,Robert D. Falgout,Van Emden Henson,Jim E. Jonespper and copper processing. A suitable low permittivity material (low . dielectric) for near future needs has yet to be found because, according to NTRS, “Materials that simultaneously meet the electrical, mechanical and thermal requirements have been elusive”. Fluoropolymers have low permittivities

上下倒置

Ernesto Gomez,L. Ridgway Scotttheir surface density were correlated with the adhesion of thin metal films on polymeric substrate. 2) When the ion-plating technique was used to metallize plastics, the peel strength at the polymer/metal interface increased with increase in the R.F. power and the accelerating voltage. The deposited

不能妥协

Gary L. Millerace with an evaporated metal. Also, some preliminary results of a promising technique, High Resolution Electron Energy Loss Spectroscopy (HREELS), are presented. This vibrational spectroscopy has been used to monitor the in situ creation of an interface between evaporated aluminum and an unmodified

prostate-gland