Titlebook: Solving Irregularly Structured Problems in Parallel; 5th International Sy Alfonso Ferreira,José Rolim,Shang-Hua Teng Conference proceedings

Blandishment

书目名称Solving Irregularly Structured Problems in Parallel影响因子(影响力)




书目名称Solving Irregularly Structured Problems in Parallel影响因子(影响力)学科排名




书目名称Solving Irregularly Structured Problems in Parallel网络公开度




书目名称Solving Irregularly Structured Problems in Parallel网络公开度学科排名




书目名称Solving Irregularly Structured Problems in Parallel被引频次




书目名称Solving Irregularly Structured Problems in Parallel被引频次学科排名




书目名称Solving Irregularly Structured Problems in Parallel年度引用




书目名称Solving Irregularly Structured Problems in Parallel年度引用学科排名




书目名称Solving Irregularly Structured Problems in Parallel读者反馈




书目名称Solving Irregularly Structured Problems in Parallel读者反馈学科排名

丛林

Matthias Eichstaedt,Qi Lu,Shang-Hua Tengl induced gap states (MIGS) models . and defect models.. These two types of models are mutually exclusive, as the MIGS models generally ignore the influence of defects and the defect models, for their part, ignore the importance of screening by the metal. Historically the MIGS models preceded the ot

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天文台

troversial) .. The origin and nature of the interface states which pin the Fermi level (E.) at metal-semiconductor interfaces remain uncertain. The difficulty in resolving this issue stems from the diversity of metal-semiconductor interfaces and from the complexity of their chemistry, morphology and

expire

P.M. Selwood,M. Berzins,J.M. Nash,P.M. Dews based on the general assumption that Ef is pinned in response to the presence of surface states. Bardeen1 originally suggested that the surface states were intrinsic to the semiconductor surface, while Heine2 proposed that the pinning was due to the tails of the metal wavefunctions decaying into t

abreast

Tamara G. Koldatroversial) .. The origin and nature of the interface states which pin the Fermi level (E.) at metal-semiconductor interfaces remain uncertain. The difficulty in resolving this issue stems from the diversity of metal-semiconductor interfaces and from the complexity of their chemistry, morphology and

噱头

Robert Garmannic layers when they are grown at room temperature ( RT ) or even at lower temperatures, such as around 80 °K (conventionally called LNT, Liquid Nitrogen Temperature ). This fact resulted intriguing in consideration of the rather high energy needed to break a bond in many semiconductor substrates. Fo

排斥

Intractable

JUST