Titlebook: Simulation of Semiconductor Processes and Devices 2001; SISPAD 01 Dimitris Tsoukalas,Christos Tsamis Conference proceedings 2001 Springer-V

Nerve-Block

Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon,ribes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion

Dorsal-Kyphosis

Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach,d than with the “plus-factor” model. The user is not required to run Monte Carlo simulations nor to explicitly take spatial correlations between interstitials and vacancies into account. The model is formulated in terms of effective Frenkel pair numbers and vertical and lateral shift distances betwe

Fraudulent

Local Iterative Monte Carlo investigation of the influence of electron-electron scattering on shortTS with channel length as short as 25 nm. The results indicate that electron-electron scat- tering might be an important source for hot electrons in the next generations of Si-MOSFETs. But the effect decreases if the channel length comes close to 25 nm.

kindred

笨重

An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects,verage carrier energy give a rather poor description of the problem. We show that by accounting for the average square energy an accurate analytical description of the distribution function can be given which can then be used to evaluate microscopic models in a macroscopic device simulator. The new

Neonatal

Density of States and Group Velocity Calculations for SiO2,ee-Fock (HF) and Density-Functional Theory (DFT). Eight energy bands have been used to calculate the density of states and group velocity for the energies of interest. Two different crystal structures of SiO2, built-up by the same fundamental unit, namely, the SiO. tetrahedron, are investigated: the

包庇

Investigation of Spurious Velocity Overshoot Using Monte Carlo Data,d by the drift-diffusion model. Although these models have been available for several decades, there are still unresolved issues. One of these issues is the occurrence of spurious peaks in the velocity profile which have originally been related to Blotekjær‘s model. Recent research, however, showed

痛得哭了

Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Strhe mechanical behavior of (poly)crystalline materials used in the microelectronic technologies. The benefits of this new model are a better prediction of the stresses magnitude in elasto-plastic materials, the capability to calculate the location and size of plastic area in silicon substrate and the

Nucleate

格子架

On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets,k horse for the simulation of ion implantation for a long time, but recent accurate experimental measurements of the implantation profiles in non-crystalline materials (photoresist, amorphous carbon, pre-amorphized silicon) indicated systematic deviations of the measured profiles from the prediction