Titlebook: Simulation of Semiconductor Processes and Devices 1998; SISPAD 98 Kristin Meyer,Serge Biesemans Conference proceedings 1998 Springer-Verlag

毛细血管

雀斑

,Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching n of an LDMOS MOSFET, a model for the intrinsic device and the extrinsic parasitic components is developed. The RF performance of the model is then verified with experimental data. With the proven model, the effect of parasitic components is analyzed and the matching networks are optimized for the desired response.

江湖骗子

Forsake

Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Exdeling capabilities include 3D rendering of solid objects, surface meshing, electrical parameter (mainly capacitance) extraction for arbitrarily shaped objects. This software ensemble provides a direct link between design parameters and electrical performance. Analysis of a four transistor SRAM cell is used as an example.

cinder

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