Titlebook: Simulation of Semiconductor Processes and Devices 1998; SISPAD 98 Kristin Meyer,Serge Biesemans Conference proceedings 1998 Springer-Verlag

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Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors,e germanium and base doping profiles of modern rf-bipolar transistors from the process recipe, i.e. gas flows, deposition time and temperature. A first approach is based on the interpolation of experimental data characterizing the CVD-equipment. Although this gives already very good results for slow

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A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculatiith an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail region. In this paper we present a simple model for the formation of immobile boron clusters and associated point defect

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Electromagnetic Simulation for the Modeling of Interconnects,tem and economical point of view but antagonist from a physical or electromagnetic one:.For modern VLSI circuits the well known Moore’s law is used to generate road maps describing the expectations for the next generations of integrated circuits in which downsizing is accompanied by increasing circu

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