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Titlebook: Simulation of Semiconductor Processes and Devices 1998; SISPAD 98 Kristin Meyer,Serge Biesemans Conference proceedings 1998 Springer-Verlag

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书目名称Simulation of Semiconductor Processes and Devices 1998
副标题SISPAD 98
编辑Kristin Meyer,Serge Biesemans
视频video
概述The latest results in simulation of semiconductor processes and devices are presented.This conference is the most important forum for exchanging scientific information
图书封面Titlebook: Simulation of Semiconductor Processes and Devices 1998; SISPAD 98 Kristin Meyer,Serge Biesemans Conference proceedings 1998 Springer-Verlag
描述This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include:• semiconductor equipment simulation• process modeling and simulation• device modeling and simulation of complex structures• interconnect modeling• integrated systems for process, device, circuit simulation and optimisation• numerical methods and algorithms• compact modeling and parameter extraction• modeling for RF applications• simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
出版日期Conference proceedings 1998
关键词algorithm; integrated circuit; modeling; numerical methods; optimization; simulation; single-electron tran
版次1
doihttps://doi.org/10.1007/978-3-7091-6827-1
isbn_softcover978-3-7091-7415-9
isbn_ebook978-3-7091-6827-1
copyrightSpringer-Verlag/Wien 1998
The information of publication is updating

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TCAD at the SRC,ng companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities. Research partnerships exist with various organizations such as SEMATECH, the National Laboratories, NIST, DARPA, the State of New York. The SRC is presently organized into 7 scie
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TCAD in Selete,up to now has changed. The author analyzes the causes of the changes in the competition fields and a solution is proposed from the view point of the TCAD technology. The purpose and activity of TCAD in Selete is also described. Selete is a stock company established by the LSI manufacturers(*).
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Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial sses of formation and decomposition of the stable adduct compounds as a salient feature of CVD of group III-nitrides. The model relies upon estimation of the thermochemical properties of the feasible adducts, and detection of the predominant gas-phase species and reaction paths. No fitted parameters
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Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings,tion of computational predictions is done by temperature measurements. Flow regimes are compared with respect to the flow structure and temperature distribution in the reactor. The modeling study results in better understanding of the processes that determine growth rate uniformity and reproducibili
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,Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching n of an LDMOS MOSFET, a model for the intrinsic device and the extrinsic parasitic components is developed. The RF performance of the model is then verified with experimental data. With the proven model, the effect of parasitic components is analyzed and the matching networks are optimized for the d
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