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Titlebook: Silicon-on-Insulator Technology; Materials to VLSI Jean-Pierre Colinge Book 1997Latest edition Springer-Verlag US 1997 CMOS.DRAM.Leistungsf

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Jean-Pierre Colinge to assign coordinates to key points and to translate the hypotheses and conclusion of a geometry statement into multivariate polynomial equations and inequalities. The second step is to prove the corresponding algebraic statements using various algebraic techniques. To date the most practically suc
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shaping interactive learning and novelty generation in inter-organisational projects. In Chapter 2, it has been outlined that inter-organisational co-operation is sought to access and combine different resources, primarily knowledge and skills, from different organisations in order to close resource
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SOI CMOS Technology,wafers contain only silicon and silicon dioxide, and that the appearance of SOI wafers is very similar to that of bulk silicon wafers. As a consequence, SOI circuit processing can be carried out in standard bulk silicon processing lines. Mixed batches (containing both bulk and SOI substrates) can be processed as well.
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The SOI MOSFET,em particularly attractive for applications such as rad-hard circuits, deep-submicron devices and high-temperature electronics. The properties of the SOI MOSFET operating in a harsh environment will be described in Chapter 7.
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